Highly-Efficient, Isolated Multi-MHz GaN-based DC-DC Converters with Active Diode Rectification

This joint project between Friedrich-Alexander University and the University of Stuttgart, part of the DFG's GaNius priority programme, aims to investigate the comprehensive optimisation of high-frequency, GaN-based, isolated DC/DC converters with monolithically integrated active diodes on the secondary side. Through comprehensive mathematical analysis at the circuit level in combination with a modelling workflow of the magnetic components, the aim is to achieve multi-domain optimisation of the entire converter in the thermal and electrical range. The design methodology used is fully scalable and parameterisable so that it can be transferred to other applications and technologies. Through the monolithic integration of an active GaN-based diode, a self-controlled rectifier stage for MHz frequencies is to be investigated in terms of efficiency, power density, scalability and transferability to other applications.
The objectives of the project are defined on this basis. In addition to gaining knowledge, this project aims to provide scientifically sound, precise, scalable and reliable tools (substrates, design and simulation methodology) for GaN-based isolated DC/DC converters with self-controlled rectifier stages and switching frequencies in the MHz range.